Growth of p-gan on silicon substrates with ZnO buffer layers
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2022-01-28 14:17
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RAEVSKY, Simion, GORCEAC, Leonid, BOTNARIUC, Vasile, BRANISTE, Tudor. Growth of p-gan on silicon substrates with ZnO buffer layers. In: IFMBE Proceedings: . 4th International Conference on Nanotechnologies and Biomedical Engineering, Ed. 4, 18-21 septembrie 2019, Chişinău. Switzerland: Springer Nature Switzerland AG, 2020, Ediția 4, Vol.77, pp. 89-92. ISBN 978-303031865-9. ISSN 16800737. DOI: https://doi.org/10.1007/978-3-030-31866-6_19
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IFMBE Proceedings
Ediția 4, Vol.77, 2020
Conferința "Conference on Nanotechnologies and Biomedical Engineering"
4, Chişinău, Moldova, 18-21 septembrie 2019

Growth of p-gan on silicon substrates with ZnO buffer layers

DOI: https://doi.org/10.1007/978-3-030-31866-6_19

Pag. 89-92

Raevsky Simion1, Gorceac Leonid1, Botnariuc Vasile1, Braniste Tudor2
 
1 Moldova State University,
2 Technical University of Moldova
 
Proiecte:
 
Disponibil în IBN: 27 octombrie 2020


Rezumat

GaN layers on Silicon with ZnO intermediate layer were synthesized by using the HVPE (Hydride Vapor Phase Epitaxy) method. ZnO layers were deposited from solutions of zinc compounds in ethanol or water in two steps. At the first step a ZnO nucleation layer was deposited from a solution of zinc acetate in ethanol, at the second step a ZnO precipitate was deposited from a solution of zinc nitrate and KOH in water by boiling. On the obtained structures the GaN nucleation layers were deposited at 500 ℃ for 15 min, then GaN layers were grown at 850–970 ℃ for 30 ± 5 min. Structures were studied by using the optical and SEM microscope and XRD method. The type of conductivity of the layers was determined by using the method of thermal electromotive force measurement (TEFM). The possibility of the electrical conductivity (EC) type changing from n- to p-type for the GaN layers deposited on silicon substrates with the use of intermediate ZnO layer deposited from solutions is demonstrated for the first time. 

Cuvinte-cheie
GaN, HVPE, Si, Solution, Termal electromotive force, ZnO