Thermal behaviour of GaSb system doped with Fe, Mn, Cd, Gd
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POSTOLACHI, Igor, ROTARU, Andrei, MIHĂLACHE, Alexei, ROTARU, Petre. Thermal behaviour of GaSb system doped with Fe, Mn, Cd, Gd. In: Central and Eastern European Conference on Thermal Analysis and Calorimetry: and 14th Mediterranean Conference on Calorimetry and Thermal Analysis, Ed. 5, 28-31 august 2017, Chişinău. Roma, Italy: Academica Greifswald, 2019, Editia 5, p. 288. ISBN 978-3-940237-59-0.
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Central and Eastern European Conference on Thermal Analysis and Calorimetry
Editia 5, 2019
Conferința "Central and Eastern European Conference on Thermal Analysis and Calorimetry"
5, Chişinău, Moldova, 28-31 august 2017

Thermal behaviour of GaSb system doped with Fe, Mn, Cd, Gd

CZU: 538.9+539.1+544

Pag. 288-288

Postolachi Igor1, Rotaru Andrei2341, Mihălache Alexei1, Rotaru Petre2
 
1 Tiraspol State University,
2 University of Craiova,
3 “Ilie Murgulescu” Institute of Physical Chemistry of the Romanian Academy,
4 National Institute for Laser, Plasma and Radiation Physics (INFLPR)
 
Disponibil în IBN: 9 iunie 2020


Rezumat

Gallium antimonide is considered to be a promising material for optoelectronic and thermoelectronic devices, due to the prohibited bandwidth, and the high solubility of the chemical elements in groups I-III. Due to the high concentration of its own defects (≈ 1017 cm-3, the specific energy band structures and the high solubility of impurities in gallium antimonide, it was possible to create tunnel diodes and coherent radiation sources in the current spectral range for modern information systems. GaSb semiconductor, with a forbidden narrow band, is one of the most demanding materials for creating thermo-photovoltaic elements, luminescent diodes, photodiodes, solar cells and other microelectronic devices. Many uncertainties are related to the doping mechanisms, and the dopant's influence on the physical processes in the base material. The atoms of the Group IV metals, in particular of Fe, substitute in the GaSb crystalline network the Ga atoms, forming as a whole the separate subnetwork of the Sb and Ga atoms. Fig. 1 Fig. 2 In Fig. 1 is the structure of the semiconductor Ga(Fe)Sb: Ga - violet color, Fe blue color, Sb - yellow color. The GaSb system doped with Fe, Mn, Cd and Gd was thermally analyzed in air (150 cm3min-1) with a PerkinElmer DIAMOND TG/DTA thermobalance from room temperature to 1000 °C. In Fig. 2 is the result of the thermal analysis of a Fe-doped GaSb sample with an atomic concentration of 1018 cm-3 .