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773 0 |
Căutarea după subiecte similare conform CZU |
535-1+621.382.3 (1) |
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Electrotehnică (1154) |
SM ISO690:2012 BRANISTE, Tudor, ZHUKOV, Sergey, DRAGOMAN, Mircea L., ALYABYEVA, L., CIOBANU, Vladimir, ALDRIGO, Martino, DRAGOMAN, Daniela, IORDANESCU, Sergiu A., SHREE, Sindu, RAEVSKY, Simion, ADELUNG, Rainer, GORSHUNOV, Boris, TIGINYANU, Ion. Terahertz shielding properties of aero-GaN . In: Semiconductor Science and Technology, 2019, vol. 34, pp. 1-6. ISSN 0268-1242. DOI: https://doi.org/10.1088/1361-6641/ab4e58 |
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Semiconductor Science and Technology | |
Volumul 34 / 2019 / ISSN 0268-1242 | |
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DOI:https://doi.org/10.1088/1361-6641/ab4e58 | |
CZU: 535-1+621.382.3 | |
Pag. 1-6 | |
Rezumat | |
The electrodynamic properties of the first aero-material based on compound semiconductor, namely of Aero-GaN, in the terahertz frequency region are experimentally investigated. Spectra of complex dielectric permittivity, refractive index, surface impedance are measured at frequencies 4-100 cm-1 and in the temperature interval 4-300 K. The shielding properties are found based on experimental data. The aero-material shows excellent shielding effectiveness in the frequency range from 0.1 to 1.3 THz, exceeding 40 dB in a huge frequency bandwidth, which is of high interest for industrial applications. These results place the aero-GaN among the best THz shielding materials known today. |
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Cuvinte-cheie aero-GaN, complex dielectric permittivity, THz shielding |
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<meta name="citation_title" content="Terahertz shielding properties of aero-GaN "> <meta name="citation_author" content="Braniste Tudor"> <meta name="citation_author" content="Zhukov Sergey"> <meta name="citation_author" content="Dragoman Mircea L."> <meta name="citation_author" content="Alyabyeva L."> <meta name="citation_author" content="Ciobanu Vladimir"> <meta name="citation_author" content="Aldrigo Martino"> <meta name="citation_author" content="Dragoman Daniela"> <meta name="citation_author" content="Iordanescu Sergiu A."> <meta name="citation_author" content="Shree Sindu"> <meta name="citation_author" content="Raevsky Simion"> <meta name="citation_author" content="Adelung Rainer"> <meta name="citation_author" content="Gorshunov Boris"> <meta name="citation_author" content="Tiginyanu Ion"> <meta name="citation_publication_date" content="2019/11/04"> <meta name="citation_journal_title" content="Semiconductor Science and Technology"> <meta name="citation_firstpage" content="1"> <meta name="citation_lastpage" content="6"> <meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Braniste_2019_Semicond._Sci._Technol._34_12LT02.pdf">