Afiliat la Université de Montpellier
| New GaN and silicon junctionless field effect transistor terahertz detectors |
| Knap Wojciech |
| Materials Science and Condensed Matter Physics |
| Ediția 9. 2018. Chișinău, Republica Moldova. Institutul de Fizică Aplicată. 31-31. |
| Disponibil online 14 January, 2019 |
| Plasma field effect transistors arrays for amplitude and polarization imaging in THz range |
| Knap Wojciech , Moulin Benoit , Sypek M. , Coquillat D. , Cywinski G. , Suszek J. , Triki M. , But D. , Siemion A. , Szkudlarek K. , Archier C. , Diakonova N. , Antonini T. , Teppe Frederic |
| Materials Science and Condensed Matter Physics |
| Editia 8. 2016. Chişinău. Institutul de Fizică Aplicată. 45-45. |
| Disponibil online 18 July, 2019 |
| Physics of nanometer plasma field effect transistors for detection of terahertz radiation |
| Knap Wojciech , But D. , Diakonova N. , Teppe Frederic , Coquillat D. |
| Materials Science and Condensed Matter Physics |
| Editia 7. 2014. Chișinău, Republica Moldova. Institutul de Fizică Aplicată. 41-42. |
| Disponibil online 24 February, 2019 |
| III-V versus silicon choice of nanometer field effect transistors for THZ applications |
| Knap Wojciech , But D. , Coquillat D. , Diakonova N. , Teppe Frederic |
| Materials Science and Condensed Matter Physics |
| Editia 6. 2012. Chișinău, Republica Moldova. Institutul de Fizică Aplicată. 29-29. |
| Disponibil online 5 March, 2020 |
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