| 1. | Current-voltage characteristics of ZnSe-based Perovskite solar cells with inverted planar architecture . Journal of Optoelectronics and Advanced Materials. 2020, nr. , 378-371. ISSN 1454-4164. (Cat. ) |
| 2. | Studies of vanadium and vanadium oxide based nanocomposite structures . Journal of Optoelectronics and Advanced Materials. 2017, nr. , 0-0. ISSN 1454-4164. (Cat. ) |
| 3. | Detection of thin oil films on water surface from a remote distance when fluorescence is excited by 447nm laser light . Journal of Optoelectronics and Advanced Materials. 2017, nr. , 188-184. ISSN 1454-4164. (Cat. ) |
| 4. | Photoluminescente properties of Eu(o-MBA)3Phen organic compound embedded in PEPC polymer matrix . Journal of Optoelectronics and Advanced Materials. 2017, nr. , 227-223. ISSN 1454-4164. (Cat. ) |
| 5. | Influence of precursor crystallinity on photocatalytic activity of PdS/CdS-ZnS . Journal of Optoelectronics and Advanced Materials. 2016, nr. , 1032-1027. ISSN 1454-4164. (Cat. ) |
| 6. | Polarization dependent functionality of optical elements based on (Quasi) periodic two-dimensional structures . Journal of Optoelectronics and Advanced Materials. 2016, nr. , 0-0. ISSN 1454-4164. (Cat. ) |
| 7. | Direct photoinduced surface relief formation in carbazole-based azopolymer using polarization holographic recording . Journal of Optoelectronics and Advanced Materials. 2016, nr. , 768-763. ISSN 1454-4164. (Cat. ) |
| 8. | Approximate analysis of the diffraction efficiency of transmission phase holographic gratings with smooth non-sinusoidal relief . Journal of Optoelectronics and Advanced Materials. 2016, nr. , 64-56. ISSN 1454-4164. (Cat. ) |
| 9. | Influence of heat treatment and illumination on the vibration modes of (As4S3Se3)1-xSnx thin films . Journal of Optoelectronics and Advanced Materials. 2016, nr. , 48-34. ISSN 1454-4164. (Cat. ) |
| 10. | Effect of optical coating in the thin-film system of chalcogenide glassy semiconductor-dielectric when recording the holographic optical information . Journal of Optoelectronics and Advanced Materials. 2015, nr. , 929-925. ISSN 1454-4164. (Cat. ) |
| 11. | X-Ray diffraction and Raman spectra of As4S3Se3-Sn glasses . Journal of Optoelectronics and Advanced Materials. 2015, nr. , 984-980. ISSN 1454-4164. (Cat. ) |
| 12. | Analysis of CdS/CdTe photovoltaic cells manufactured on polyimide substrates . Journal of Optoelectronics and Advanced Materials. 2014, nr. , 872-864. ISSN 1454-4164. (Cat. ) |
| 13. | Technology of vanadium and its oxides based nanocomposite structures . Journal of Optoelectronics and Advanced Materials. 2014, nr. , 231-227. ISSN 1454-4164. (Cat. ) |
| 14. | Technology of fabrication of chalcogenide glassy semiconducting films . Journal of Optoelectronics and Advanced Materials. 2013, nr. , 1368-1362. ISSN 1454-4164. (Cat. ) |
| 15. | On the governed kinetics describing in-situ photodarkening in thin As-Se films . Journal of Optoelectronics and Advanced Materials. 2012, nr. , 595-590. ISSN 1454-4164. (Cat. ) |
| 16. | Optical properties of amorphous As 45S 15Se 40 thin films . Journal of Optoelectronics and Advanced Materials. 2011, nr. , 1416-1412. ISSN 1454-4164. (Cat. ) |
| 17. | On the compositional dependence of refractive index in amorphous Ge xAs xSe 1-2x films . Journal of Optoelectronics and Advanced Materials. 2011, nr. , 1422-1417. ISSN 1454-4164. (Cat. ) |
| 18. | TL and OSL dosimetric properties of Ge 30As 4S 66 chalcogenic glass system doped with DY . Journal of Optoelectronics and Advanced Materials. 2011, nr. , 1449-1447. ISSN 1454-4164. (Cat. ) |
| 19. | Photocapacitance relaxation and rigidity transition in Ge xAs xSe 1-2x amorphous films . Journal of Optoelectronics and Advanced Materials. 2011, nr. , 1482-1478. ISSN 1454-4164. (Cat. ) |
| 20. | Optical properties of phase change memory Ge 1Sb 2Te 4 glasses . Journal of Optoelectronics and Advanced Materials. 2011, nr. , 1486-1483. ISSN 1454-4164. (Cat. ) |
| 21. | Optical and photoluminescence characteristics of amorphous nanocomposites containing organic compounds with Eu +3 and polymers . Journal of Optoelectronics and Advanced Materials. 2011, nr. , 1593-1590. ISSN 1454-4164. (Cat. ) |
| 22. | Mass-spectrometric studies of vitreous As2S3 . Journal of Optoelectronics and Advanced Materials. 2011, nr. , 1198-1193. ISSN 1454-4164. (Cat. ) |
| 23. | Tunable PbTe nanocolloids and nanolayers: HTSP precipitation, spectral properties and light-hole band lowering due to quantization . Journal of Optoelectronics and Advanced Materials. 2010, nr. , 1728-1720. ISSN 1454-4164. (Cat. ) |
| 24. | Plasmonics and polaritonics surpass limited in speed nanoelectronics and limited in size microphotonics . Journal of Optoelectronics and Advanced Materials. 2010, nr. , 799-793. ISSN 1454-4164. (Cat. ) |
| 25. | The spontaneous emission probabilities for Ga-La-S:Pr3+ glass . Journal of Optoelectronics and Advanced Materials. 2010, nr. , 805-800. ISSN 1454-4164. (Cat. ) |
| 26. | Electric field effect on thermoelectric properties of bismuth telluride square nanowires . Journal of Optoelectronics and Advanced Materials. 2010, nr. , 903-900. ISSN 1454-4164. (Cat. ) |
| 27. | Registration of low intensity IR radiation using modal interference in an optical fiber . Journal of Optoelectronics and Advanced Materials. 2009, nr. , 1958-1954. ISSN 1454-4164. (Cat. ) |
| 28. | New luminescent compounds based on chalcogenides and organic materials . Journal of Optoelectronics and Advanced Materials. 2009, nr. , 2007-2004. ISSN 1454-4164. (Cat. ) |
| 29. | Ageing phenomena in thin amorphous AsxSe100-x films . Journal of Optoelectronics and Advanced Materials. 2009, nr. , 2018-2011. ISSN 1454-4164. (Cat. ) |
| 30. | Modification of the optical constants in amorphous Sb2Se 3:Sn thin films under the illumination and heat treatment . Journal of Optoelectronics and Advanced Materials. 2009, nr. , 2043-2039. ISSN 1454-4164. (Cat. ) |
| 31. | Post-irradiation structural relaxation in quasi-binary arsenic/antimony trisulphide glasses . Journal of Optoelectronics and Advanced Materials. 2009, nr. , 2082-2079. ISSN 1454-4164. (Cat. ) |
| 32. | X-ray diffraction analysis of PbTe/SnTe superlattices grown on Si(111) substrates . Journal of Optoelectronics and Advanced Materials. 2009, nr. , 2092-2088. ISSN 1454-4164. (Cat. ) |
| 33. | Optical losses and photo-induced absorption in chalcogenide glass fibers . Journal of Optoelectronics and Advanced Materials. 2009, nr. , 2178-2172. ISSN 1454-4164. (Cat. ) |
| 34. | Optical and photoelectric properties of GaSe, InSe-semiconductor oxide of In, Sn, Ti, Bi, Zn, Cu, Cd heterojunctions . Journal of Optoelectronics and Advanced Materials. 2009, nr. , 812-797. ISSN 1454-4164. (Cat. ) |
| 35. | Fiber optic method for measuring the intensity of IR radiation . Journal of Optoelectronics and Advanced Materials. 2009, nr. , 385-380. ISSN 1454-4164. (Cat. ) |
| 36. | Fluorescent properties of nanocomposite organic luminophore compound - Polymer . Journal of Optoelectronics and Advanced Materials. 2008, nr. , 3356-3353. ISSN 1454-4164. (Cat. ) |
| 37. | Photoinduced effects and holographic recording in amorphous As 100-xSex, As2Se3:Sn and Sb 2Se3:Sn films . Journal of Optoelectronics and Advanced Materials. 2008, nr. , 3476-3469. ISSN 1454-4164. (Cat. ) |
| 38. | Manipulation of cooperative emission using laser pulses . Journal of Optoelectronics and Advanced Materials. 2008, nr. , 2897-2894. ISSN 1454-4164. (Cat. ) |
| 39. | Two photon multi mode laser model based on experimental observations . Journal of Optoelectronics and Advanced Materials. 2008, nr. , 3021-3017. ISSN 1454-4164. (Cat. ) |
| 40. | Luminescence properties of Eu3+/thenoyltrifluoroacetonate composites . Journal of Optoelectronics and Advanced Materials. 2008, nr. , 844-841. ISSN 1454-4164. (Cat. ) |
| 41. | Low temperature X-Ray powder diffraction study of lead telluride doped with Yb . Journal of Optoelectronics and Advanced Materials. 2008, nr. , 861-860. ISSN 1454-4164. (Cat. ) |
| 42. | Some optical properties of thermally deposited Sb2Se 3:Sn thin films . Journal of Optoelectronics and Advanced Materials. 2008, nr. , 866-862. ISSN 1454-4164. (Cat. ) |
| 43. | Some optical and recording properties of composite material As 2S3-PVP . Journal of Optoelectronics and Advanced Materials. 2007, nr. , 3006-3002. ISSN 1454-4164. (Cat. ) |
| 44. | Diffraction optical structures on the basis of chalcogenide glasses and polymers . Journal of Optoelectronics and Advanced Materials. 2007, nr. , 3012-3007. ISSN 1454-4164. (Cat. ) |
| 45. | Relaxation of photodarkening in a-As2S3 films doped with Pr3+, Dy3+ and Nd3+ . Journal of Optoelectronics and Advanced Materials. 2007, nr. , 3137-3124. ISSN 1454-4164. (Cat. ) |
| 46. | Optical properties and photoinduced absorption in As-Se and As 2Se3:Sn thin films . Journal of Optoelectronics and Advanced Materials. 2007, nr. , 3142-3138. ISSN 1454-4164. (Cat. ) |
| 47. | Collective resonance fluorescence of extended systems of rare earth elements in the resonator standing wave in glass materials . Journal of Optoelectronics and Advanced Materials. 2007, nr. , 3186-3182. ISSN 1454-4164. (Cat. ) |
| 48. | Photoluminescence of composites based on Eu3+/TTFA and polymer SBMA . Journal of Optoelectronics and Advanced Materials. 2007, nr. , 3267-3265. ISSN 1454-4164. (Cat. ) |
| 49. | Microthermocouples of thermoelectric microwires . Journal of Optoelectronics and Advanced Materials. 2007, nr. , 1815-1813. ISSN 1454-4164. (Cat. ) |
| 50. | Optical properties of As-Se amorphous composites . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 2085-2080. ISSN 1454-4164. (Cat. ) |
| 51. | A programmable metallization cell based on Ag-As2S3 . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 2119-2117. ISSN 1454-4164. (Cat. ) |
| 52. | Soft magnetic behaviour of nanocrystalline Fe-based glass-coated microwires . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 1671-1667. ISSN 1454-4164. (Cat. ) |
| 53. | Photoluminescence of Ga0.017Ge0.25As 0.083S0.65 glasses doped with rare-earth ions . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 1344-1341. ISSN 1454-4164. (Cat. ) |
| 54. | Luminescent properties of ZnS single crystal annealed in the vth group elements melt . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 1491-1488. ISSN 1454-4164. (Cat. ) |
| 55. | Electronic transport and photoconductivity of polycrystalline CdSe thin films . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 921-917. ISSN 1454-4164. (Cat. ) |
| 56. | Optical and photoelectrical properties of GaS and CdTe thin FILMS, components of GaS/CdTe heterojunctions . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 0-0. ISSN 1454-4164. (Cat. ) |
| 57. | Materials and structures for semiconductor spintronics . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 438-425. ISSN 1454-4164. (Cat. ) |
| 58. | Double glass drag spinning method of fabrication of thermoelectric coaxial cables and microthermocouples . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 603-601. ISSN 1454-4164. (Cat. ) |
| 59. | Study of generation-recombination processes of non-equilibrium charge carriers in single crystalline thin GaSe(Cu) films . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 118-112. ISSN 1454-4164. (Cat. ) |
| 60. | Absorption spectra and extrinsic photoconductivity of Cu and Cd doped GaSe single - Crystal films . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 122-119. ISSN 1454-4164. (Cat. ) |
| 61. | Multiplasmon radiation line replicas of bound excitons in single ZnSe crystals . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 127-123. ISSN 1454-4164. (Cat. ) |
| 62. | New As2S3:Pr3* - Polymer composite materials . Journal of Optoelectronics and Advanced Materials. 2006, nr. , 260-257. ISSN 1454-4164. (Cat. ) |
| 63. | Chalcogenide glasses as multifunctional photonic MATERIALS . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 2939-2931. ISSN 1454-4164. (Cat. ) |
| 64. | Photocurrent relaxation in AsxSe1-x thin films: Compositional dependence . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 2322-2317. ISSN 1454-4164. (Cat. ) |
| 65. | Fluorescence properties of As2S3 glass doped with rare-earth elements . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 2331-2323. ISSN 1454-4164. (Cat. ) |
| 66. | Optical photoinduced phenomena and holographic recording in amorphous As-Se thin films . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 2339-2333. ISSN 1454-4164. (Cat. ) |
| 67. | Influence of the electrical field on the formation process of holographic diffraction gratings (HDG) in vitreous chalcogenide semiconductors . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 1829-1823. ISSN 1454-4164. (Cat. ) |
| 68. | Laser and electron induced structuring of thin films on the base of carbazolyl-containing polymers and polymer-ChNS compositions . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 1178-1169. ISSN 1454-4164. (Cat. ) |
| 69. | Raman spectra of AsxSe100-x glasses doped with metals . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 1221-1217. ISSN 1454-4164. (Cat. ) |
| 70. | Electrical properties of ZnSe crystals doped with transition metals . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 737-733. ISSN 1454-4164. (Cat. ) |
| 71. | Photodarkening relaxation in amorphous as2Se3 films doped with rare-earth ions . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 770-763. ISSN 1454-4164. (Cat. ) |
| 72. | Radiative centers formed by halogen molecules intercalated in MoS 2 and WS2 layered semiconductors . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 779-775. ISSN 1454-4164. (Cat. ) |
| 73. | Four-center resonance energy transfer in rare earth doped crystals . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 786-781. ISSN 1454-4164. (Cat. ) |
| 74. | Electrical and photoelectrical properties of heterojunctions on the base of Cu(InGa)Se2 . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 800-795. ISSN 1454-4164. (Cat. ) |
| 75. | On the photomagnetic effect in CdTe thin films evaporated onto unheated substrates . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 815-811. ISSN 1454-4164. (Cat. ) |
| 76. | Infrared luminescence of gold-doped ZnSe crystals . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 840-837. ISSN 1454-4164. (Cat. ) |
| 77. | Multiplasmon laser gain spectra of quantum wells . Journal of Optoelectronics and Advanced Materials. 2005, nr. , 875-871. ISSN 1454-4164. (Cat. ) |
| 78. | Optical absorption and visible luminescence in Ga-La-S-O glass doped with Pr3+ ions . Journal of Optoelectronics and Advanced Materials. 2003, nr. , 1113-1107. ISSN 1454-4164. (Cat. ) |
| 79. | Persistent photoconductivity in amorphous As2Se3 films with Sn impurity . Journal of Optoelectronics and Advanced Materials. 2003, nr. , 1120-1115. ISSN 1454-4164. (Cat. ) |
| 80. | Native centers of electron and hole traps in thin amorphous films of As2S3 and As2Se3 . Journal of Optoelectronics and Advanced Materials. 2003, nr. , 1134-1121. ISSN 1454-4164. (Cat. ) |
| 81. | Photoconductivity relaxation in amorphous As-Se thin films doped with Sn, Mn, Sm and Dy . Journal of Optoelectronics and Advanced Materials. 2003, nr. , 1214-1209. ISSN 1454-4164. (Cat. ) |
| 82. | Chalcogenide based gas sensors . Journal of Optoelectronics and Advanced Materials. 2003, nr. , 1354-1349. ISSN 1454-4164. (Cat. ) |
| 83. | Deposition of heterostructures based on CIGSE and CdS by electron-beam ablation . Journal of Optoelectronics and Advanced Materials. 2003, nr. , 821-817. ISSN 1454-4164. (Cat. ) |
| 84. | The relaxation of photodarkening in Sn doped amorphous As 2Se3 films . Journal of Optoelectronics and Advanced Materials. 2003, nr. , 395-389. ISSN 1454-4164. (Cat. ) |
| 85. | The effect of rare-earth impurity on the photodarkening relaxation in as-evaporated amorphous As2Se3:Pr and as 2Se3:Dy films . Journal of Optoelectronics and Advanced Materials. 2002, nr. , 861-857. ISSN 1454-4164. (Cat. ) |
| 86. | Chemisorptional approach to kinetic analysis of SnO2:Pd-based thin film gas sensors . Journal of Optoelectronics and Advanced Materials. 2002, nr. , 150-147. ISSN 1454-4164. (Cat. ) |
| 87. | Carbon vibration modes in C60 fullerenes . Journal of Optoelectronics and Advanced Materials. 2002, nr. , 154-151. ISSN 1454-4164. (Cat. ) |
| 88. | Thermal waves physics . Journal of Optoelectronics and Advanced Materials. 2001, nr. , 816-779. ISSN 1454-4164. (Cat. ) |
| 89. | UV irradiation effects in pure and tin-doped amorphous AsSe films . Journal of Optoelectronics and Advanced Materials. 2001, nr. , 306-303. ISSN 1454-4164. (Cat. ) |
| 90. | Spectroscopic studies of bulk As2S3 glasses and amorphous films doped with Dy, Sm and Mn . Journal of Optoelectronics and Advanced Materials. 2001, nr. , 454-443. ISSN 1454-4164. (Cat. ) |
| 91. | Donor- and acceptor-like center revealing by photoconductivity of amorphous thin As2Se3 films . Journal of Optoelectronics and Advanced Materials. 2001, nr. , 458-455. ISSN 1454-4164. (Cat. ) |
| 92. | Photoconductivity and transport properties of As-Se thin films . Journal of Optoelectronics and Advanced Materials. 2001, nr. , 479-473. ISSN 1454-4164. (Cat. ) |
| 93. | Evaluation of hole drift mobility in glassy As2S3 in the temperature range 77-330 K . Journal of Optoelectronics and Advanced Materials. 2001, nr. , 31-27. ISSN 1454-4164. (Cat. ) |
| 94. | optical hysteresis in free-standing porous silicon films . Journal of Optoelectronics and Advanced Materials. 2001, nr. , 135-133. ISSN 1454-4164. (Cat. ) |
| 95. | On the photoconductivity of Bi2O3 in thin films . Journal of Optoelectronics and Advanced Materials. 2000, nr. , 389-385. ISSN 1454-4164. (Cat. ) |
| 96. | Photoconductivity relaxation in As2Se3:Sn and AsSe:Sn amorphous thin films . Journal of Optoelectronics and Advanced Materials. 2000, nr. , 296-293. ISSN 1454-4164. (Cat. ) |
| 97. | Effect of metal additives on photodarkening kinetics in amorphous As2Se3 films . Journal of Optoelectronics and Advanced Materials. 2000, nr. , 58-53. ISSN 1454-4164. (Cat. ) |
| 98. | Structure and properties of As2S3 and As2Se3 glasses modified with Dy, Sm and Mn . Journal of Optoelectronics and Advanced Materials. 1999, nr. , 24-15. ISSN 1454-4164. (Cat. ) |
| 99. | Optical limiting in free-standing porous silicon films . Journal of Optoelectronics and Advanced Materials. 1999, nr. , 69-67. ISSN 1454-4164. (Cat. ) |
| 100. | Tin-doped arsenic selenide glasses . Journal of Optoelectronics and Advanced Materials. 1999, nr. , 36-27. ISSN 1454-4164. (Cat. ) |
| 101. | Modification of plastic and brittle properties of InP single crystals by ion implantation . Journal of Optoelectronics and Advanced Materials. 1999, nr. , 72-69. ISSN 1454-4164. (Cat. ) |