Lista articolelor cu rezumate în limba engleza
Afisarea articolelor: 1-20(53)
| 1. | Two-Dimensional Electron-Hole System under the Influence of the Chern–Simons Gauge Field Created by the Quantum Point Vortices . Semiconductors. 2021, nr. , 548-535. ISSN 1063-7826. (Cat. ) |
| 2. | Thermodynamics of the Ideal Two-Dimensional Magnetoexciton Gas with Linear Dispersion Law . Semiconductors. 2020, nr. , 1525-1522. ISSN 1063-7826. (Cat. ) |
| 3. | Two Dimensional Bright and Dark Magnetoexcitons Interacting with Quantum Point Vortices . Semiconductors. 2019, nr. , 2059-2055. ISSN 1063-7826. (Cat. ) |
| 4. | Thermoelectric Properties of Semimetal and Semiconductor Bi1 –xSbx Foils and Wires . Semiconductors. 2019, nr. , 661-657. ISSN 1063-7826. (Cat. ) |
| 5. | Miniaturized Heat-Flux Sensor Based on a Glass-Insulated Bi–Sn Microwire . Semiconductors. 2019, nr. , 666-662. ISSN 1063-7826. (Cat. ) |
| 6. | Polarized Retroreflection from Nanoporous III–V Semiconductors . Semiconductors. 2018, nr. , 2069-2068. ISSN 1063-7826. (Cat. ) |
| 7. | Metastable Bound States of the Two-Dimensional Bimagnetoexcitons in the Lowest Landau Levels Approximation . Semiconductors. 2018, nr. , 1805-1801. ISSN 1063-7826. (Cat. ) |
| 8. | Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers . Semiconductors. 2017, nr. , 662-657. ISSN 1063-7826. (Cat. ) |
| 9. | On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator Bi1–xSbx (0.07 ≤ x ≤ 0.2) . Semiconductors. 2017, nr. , 416-413. ISSN 1063-7826. (Cat. ) |
| 10. | Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides . Semiconductors. 2015, nr. , 796-791. ISSN 1063-7826. (Cat. ) |
| 11. | Size effect in galvanomagnetic phenomena in bismuth films doped with tellurium . Semiconductors. 2014, nr. , 635-630. ISSN 1063-7826. (Cat. ) |
| 12. | Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields . Semiconductors. 2014, nr. , 218-216. ISSN 1063-7826. (Cat. ) |
| 13. | Effect of a transverse electric field on charge carrier mobility in nanowires . Semiconductors. 2012, nr. , 1011-1008. ISSN 1063-7826. (Cat. ) |
| 14. | Mapping of two-photon luminescence amplification in zinc-oxide microstructures . Semiconductors. 2012, nr. , 362-360. ISSN 1063-7826. (Cat. ) |
| 15. | Studies of the mobility of charge carriers in low-dimensional systems in a transverse DC electric field . Semiconductors. 2011, nr. , 1034-1032. ISSN 1063-7826. (Cat. ) |
| 16. | Thermoelectric properties of symmetric and asymmetric double quantum well structures . Semiconductors. 2009, nr. , 628-624. ISSN 1063-7826. (Cat. ) |
| 17. | Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide . Semiconductors. 2008, nr. , 7-1. ISSN 1063-7826. (Cat. ) |
| 18. | Properties of barrier contacts with nanosize TiB x layers to InP . Semiconductors. 2008, nr. , 782-777. ISSN 1063-7826. (Cat. ) |
| 19. | Features of long-term relaxation of capacitance in rectifying structures based on n-ZnP2 . Semiconductors. 2008, nr. , 668-662. ISSN 1063-7826. (Cat. ) |
| 20. | Some aspects of selection of impurities improving photoelectric characteristics of chalcogenide vitreous semiconductors . Semiconductors. 2008, nr. , 210-208. ISSN 1063-7826. (Cat. ) |
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