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Afisarea articolelor: 1-12(12)
2020
1.

Theoretical Study of Thermoelectric Properties of Covalent Organic Frameworks with Slipped Arrangement

. Journal of Electronic Materials. 2020, nr. 9(49), 5507-5498. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
2018
2.

Anisotropic Thermoelectric Devices Made from Single-Crystal Semimetal Microwires in Glass Coating

. Journal of Electronic Materials. 2018, nr. 6(47), 3176-3171. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
2016
3.

First-Principles Study of Thermoelectric Properties of Covalent Organic Frameworks

. Journal of Electronic Materials. 2016, nr. 7(45), 3452-3445. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
4.

Nanostructured TTT(TCNQ)2 Organic Crystals as Promising Thermoelectric n-Type Materials: 3D Modeling

. Journal of Electronic Materials. 2016, nr. 3(45), 1320-1316. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
2014
5.

Thermoelectric Properties of Tetrathiotetracene Iodide Crystals: Modeling and Experiment

. Journal of Electronic Materials. 2014, nr. , 3745-3740. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
2013
6.

Effect of lorenz number decrease on thermoelectric efficiency in quasi-one-dimensional organic crystals

. Journal of Electronic Materials. 2013, nr. , 2156-2151. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
7.

Ab initio calculations and measurements of thermoelectric properties of V2O5 films

. Journal of Electronic Materials. 2013, nr. , 1603-1597. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
2012
8.

Size-quantization semimetal-semiconductor transition in Bi 0.98Sb 0.02 nanowires: Thermoelectric properties

. Journal of Electronic Materials. 2012, nr. , 2316-2313. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
2010
9.

Evolution of optical and mechanical properties of semiconductors over 40 years

. Journal of Electronic Materials. 2010, nr. , 641-635. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
2009
10.

Evolution of luminescence from doped gallium phosphide over 40 years

. Journal of Electronic Materials. 2009, nr. , 646-640. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
2008
11.

Luminescence of long-term ordered pure and doped gallium phosphide

. Journal of Electronic Materials. 2008, nr. , 395-388. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
2000
12.

Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure

. Journal of Electronic Materials. 2000, nr. , 1350-1346. ISSN 0361-5235 ISSNe 1543-186X. (Cat. )
 
 

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