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SM ISO690:2012
Afisarea articolelor 1-20(35) pentru cuvîntul-cheie "Gallium nitride"
Low-voltage UV-electroluminescence from ZnO-Nanowire array/p-CaN light-emitting diodes
1, 12, 3
2 Technical University of Moldova,
Advanced Materials
Nr. / 2010 / ISSN 0935-9648 /ISSNe 1521-4095
Disponibil online 28 June, 2023. Descarcări-0. Vizualizări-130
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Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves
12, 1, Balandin Alexander A.1
1 University of California, Riverside,
2 Moldova State University
Applied Physics Letters
Nr. / 2006 / ISSN 0003-6951
Disponibil online 16 June, 2023. Descarcări-0. Vizualizări-110
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Built-in field effect on the electron mobility in AlN/GaN/AlN quantum wells
12, 12, Balandin Alexander A.1
1 University of California, Riverside,
2 Moldova State University
Applied Physics Letters
Nr. / 2006 / ISSN 0003-6951
Disponibil online 15 June, 2023. Descarcări-0. Vizualizări-177
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Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs
1, 1, 1, 2, Garcia Jorge M., Fomin Vladimir314, 34, Devreese Josef T.31
1 Eindhoven University of Technology,
2 Microelectronics Institute of Madrid,
3 University of Antwerp,
4 Moldova State University
Applied Physics Letters
Nr. / 2005 / ISSN 0003-6951
Disponibil online 15 June, 2023. Descarcări-0. Vizualizări-142
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Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques
1, 2, 3
1 Technical University of Moldova,
2 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
Applied Physics Letters
Nr. / 2005 / ISSN 0003-6951
Disponibil online 13 April, 2018. Descarcări-0. Vizualizări-737
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Mesenchymal stem cells proliferation and remote manipulation upon exposure to magnetic semiconductor nanoparticles
Branişte Fiodor1, Cobzac Vitalie2, Ababii Polina2, 1, 3, Didencu Alexandru2, 2, 2, Ababii Ion2, 14
1 Technical University of Moldova,
2 ”Nicolae Testemițanu” State University of Medicine and Pharmacy,
3 Moldova State University,
4 Academy of Sciences of Moldova
Biotechnology Reports
Nr. / 2020 / ISSN 2215-017X /ISSNe 2215-017X
Disponibil online 6 March, 2020. Descarcări-0. Vizualizări-1004
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Gunn diodes based on graded-gap semiconductor nitrides with boron nitride
1, 1, 2, Arkusha Yu.2
2 V.N.Karazin Kharkiv Natsonal University
Telecommunications, Electronics and Informatics
Ed. 5. 2015. Chișinău, Republica Moldova. ISBN 978-9975-45-377-6.
Disponibil online 21 May, 2018. Descarcări-0. Vizualizări-579
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Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers
Cojocari Oleg123, 13, 13, 13, 2, 2, 2
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Technical University Darmstadt,
3 Technical University of Moldova
International Conference on Infrared and Millimeter Waves
Ediția 29. 2004. New Jersey. ISBN 0780384903, 978-078038490-3.
Disponibil online 30 January, 2024. Descarcări-0. Vizualizări-54
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Self-organized three-dimensional nanostructured architectures in bulk GaN generated by spatial modulation of doping
12, 3, 4, Branişte Fiodor2, 2, 2, Andrade Hugo D4, 4, 5, 6, Adelung Rainer7
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
2 Technical University of Moldova,
5 Moldova State University,
ECS Journal of Solid State Science and Technology
Nr. / 2016 / ISSN 2162-8769 /ISSNe 2162-8777
Disponibil online 18 December, 2017. Descarcări-0. Vizualizări-798
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Effect of ge delta-doping of the Gan barrier on the performance of Ingan/Gan light-emitting diodes
1, 2, 3, 2, 2
1 Comrat State University,
2 Technical University Darmstadt,
3 V.N.Karazin Kharkiv Natsonal University
Ştiinţă, educaţie, cultură
Vol.2. 2017. Comrat. ISBN 978-9975-83-040-9.
Disponibil online 4 March, 2019. Descarcări-6. Vizualizări-699
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X-ray photoelectronic spectroscopy of GaN, ALGaN layers, grown on silicon by the chemical transport reactions method
1, Botnariuc Vasile1, 1, 1, Dobromir Marius2, 2
1 Moldova State University,
2 Alexandru Ioan Cuza University of Iaşi
IFMBE Proceedings
Editia 3, Vol.55. 2016. . ISSN 16800737.
Disponibil online 10 January, 2023. Descarcări-0. Vizualizări-290
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Confined electron-confined phonon scattering rates in wurtzite AlN/GaN/AlN heterostructures
1, 1, Balandin Alexander A.2
1 Moldova State University,
2 University of California, Riverside
Journal of Applied Physics
Nr. / 2004 / ISSN 0021-8979 /ISSNe 1089-7550
Disponibil online 2 November, 2023. Descarcări-0. Vizualizări-84
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Optical characterization of AlN/GaN heterostructures
12, 12, 12, 3, 3
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Technical University of Moldova,
Journal of Applied Physics
Nr. / 2003 / ISSN 0021-8979 /ISSNe 1089-7550
Disponibil online 17 April, 2018. Descarcări-0. Vizualizări-655
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Effect of p-NiO interlayer on internal quantum efficiency of p-GaN/n-ZnO light-emitting devices
123, 1, 1, 1
1 Technical University Darmstadt,
2 Moldova State University,
3 Comrat State University
Journal of Nanoelectronics and Optoelectronics
Nr. / 2015 / ISSN 1555-130X
Disponibil online 17 May, 2023. Descarcări-0. Vizualizări-156
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Photoluminescence of flux grown GaN crystals
1234, 56, DiSalvo Francis J.3, 2, 4, 2, 7, Bobylev A.28, 4, 1, Galimov Damir1, Dyachuk Vitaly1
1 South Ural State University,
5 Moldova State University,
6 Comrat State University,
Journal of Nanoelectronics and Optoelectronics
Nr. / 2013 / ISSN 1555-130X
Disponibil online 28 August, 2023. Descarcări-0. Vizualizări-152
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Controlled mixed violet-blue-red electroluminescence from Eu:Nano-phosphors/ZnO-Nanowires/p-GaN light-emitting diodes
123, 1, 2, Dhaouadi Maroua1, 1, Devys Lucie4, Gacoin Thierry4
3 Technical University of Moldova,
Journal of Physical Chemistry C
Nr. / 2013 / ISSN 1932-7447 /ISSNe 1932-7455
Disponibil online 29 February, 2024. Descarcări-0. Vizualizări-92
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High aspect ratio ternary Zn1- xCdxO nanowires by electrodeposition for light-emitting diode applications
12, 1, 1, Ciofini Ilaria1, 3
2 Technical University of Moldova,
Journal of Physical Chemistry C
Nr. / 2011 / ISSN 1932-7447 /ISSNe 1932-7455
Disponibil online 28 February, 2024. Descarcări-0. Vizualizări-53
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Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier
1, 1, Al-Daffaie S.1, 1, 2, 1, 1
1 Technical University Darmstadt,
Journal of Physics D: Applied Physics
Nr. / 2017 / ISSN 0022-3727 /ISSNe 1361-6463
Disponibil online 21 February, 2023. Descarcări-0. Vizualizări-146
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Aero-Materials Based on Wide-Band-Gap Semiconductor Compounds for Multifunctional Applications: A Review
12, Branişte Fiodor1
1 Technical University of Moldova,
2 Academy of Sciences of Moldova
IFMBE Proceedings
Ediția 6, Vol.91. 2024. Chişinău. ISSN 16800737.
Disponibil online 10 October, 2023. Descarcări-0. Vizualizări-156
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Exciton-polariton laser
1, 2
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova
Low Temperature Physics
Nr. / 2016 / ISSN 1063-777X
Disponibil online 18 December, 2017. Descarcări-0. Vizualizări-514
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