1. | BASKAKOV, A., A.V.Shubnikov Institute of Crystallography, Moscow, Rusia, OGARKOVA, Y., A.V.Shubnikov Institute of Crystallography, Moscow, Rusia, LYUBUTIN, I., A.V.Shubnikov Institute of Crystallography, Moscow, Rusia, STARCHIKOV, S., A.V.Shubnikov Institute of Crystallography, Moscow, Rusia, KSENOFONTOV, V., Universitatea Johannes Gutenberg din Mainz, Germania, SHYLIN, S., Universitatea Johannes Gutenberg din Mainz, Germania, KROITOR, D., TSURKAN, V., dr.hab, MEDVEDEV, S., Institutul Max Planck pentru Fizica Chimică a Solidelor, Germania, NAUMOV, P., A.V.Shubnikov Institute of Crystallography, Moscow, Rusia Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2. JETP Letters. 2019, nr. 8(109), 540-536. ISSN 0021-3640. |