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Prezenţa autorilor din străinătate în revista IEEE Transactions on Electron Devices

Afisarea articolelor: 1-4(4)
2019
1. PACHECO-SANCHEZ , A., Universitatea Autonomă din Barcelona, Spania, BEJENARI, I., dr., SCHROTER, M., Technische Universitat Dresden, Dresden, Germania Self-Heating Characterization and Thermal Resistance Modeling in Multitube CNTFETs. IEEE Transactions on Electron Devices. 2019, nr. 11(66), 4571-4566. ISSN - ISSNe 0018-9383.
2017
2. BEJENARI, I., dr., SCHROTER, M., Technische Universitat Dresden, Dresden, Germania, CLAUS, M., Technische Universitat Dresden, Dresden, Germania Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors. IEEE Transactions on Electron Devices. 2017, nr. 9(64), 3911-3904. ISSN - ISSNe 0018-9383.
3. SIRKELI, V., dr., YILMAZOGLU, O., Institute for Microwave Engineering and Photonics Darmstadt University of Technology Darmstadt, Germania, ONG, D., Multimedia University, Malaysia, PREU, S., Institute for Microwave Engineering and Photonics Darmstadt University of Technology Darmstadt, Germania, KUPPERS, F., Institute for Microwave Engineering and Photonics Darmstadt University of Technology Darmstadt, Germania, HARTNAGEL, H., Universitatea Tehnică, Darmstadt, Germania Resonant Tunneling and Quantum Cascading for Optimum Room-Temperature Generation of THz Signals. IEEE Transactions on Electron Devices. 2017, nr. 8(64), 3488-3482. ISSN - ISSNe 0018-9383.
2016
4. BEJENARI, I., dr., CLAUS, M., Technische Universitat Dresden, Dresden, Germania Electron Back Scattering in CNTFETs. IEEE Transactions on Electron Devices. 2016, nr. 3(63), 1345-1340. ISSN - ISSNe 0018-9383.
 
 

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