The thermoelectric properties of topological insulator (TI) bismuth- telluride layers n- and ptype have been investigated in range 4.2- 300 K and magnetic field up to 10 T. Single crystal Bi2Te3 layers with thickness of 10-20 mkm were prepared using the mechanical exfoliation method by cleaving a thin layer from bulk Bi2Te3 samples. X-Ray diffraction studies wowed that the layers were single- crystal with orientation C3 trigonal axis perpendicular the plane of the layers. From temperature dependences Seebeck coefficient S(T) and electrical resistivity r(T) the power factor P.f.=S2s(T) have been calculated. The result confirm that the largest Pf observed in the temperature region 80-250 K (P.f.= 6*10-5 V/cm*K2). Using p- and n- type layers as n- and p- lags in thermoelement we received DT= 4° at 300 K on cross- section 1*10-4 cm2 . Applying a segmentation method (increasing cross- section only to value 5*10-4 cm2) possible to received, DT= 8-10°. It is known that an increase in the temperature of the micro- sensor by 10° leads to a twofold decrease the sensor durability. Our experimental samples the thermoelectric micro- coolers with efficient cooling capacity, small areas, short response time and with reproducible engineering techniques are in high demand on the telecommunication markets of the future.