Articolul precedent |
Articolul urmator |
1245 8 |
Ultima descărcare din IBN: 2024-01-29 00:11 |
SM ISO690:2012 KOLIBABA, Gleb, FEDOROV, Vladimir, RUSNAC, Dumitru, GRABCO, Daria, MONAICO, Elena, PETRENKO, Peter A., ROTARU, C.. Manufacturing highly conductive ceramic targets and thin films of ZnO. In: NANO-2019: Limits of Nanoscience and Nanotechnologies, Ed. 2019, 24-27 septembrie 2019, Chişinău. Chișinău, Republica Moldova: 2019, p. 78. |
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NANO-2019: Limits of Nanoscience and Nanotechnologies 2019 | ||||||
Conferința "SPINTECH Summer school “S/F Hybrid Structures for Spintronics”" 2019, Chişinău, Moldova, 24-27 septembrie 2019 | ||||||
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Pag. 78-78 | ||||||
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The present investigation addresses a novel approach for sintering ZnO ceramics by means of chemical vapor transport (CVT) using compound transport agents. The typical size of obtained ZnO ceramics was 25 mm in diameter and 1 mm thickness. The sintering ZnO ceramics at the use of HCl+H2+C, is the most perspective and effective method, which has the following advantages: the low sintering temperature of 1070 °C, 99% of the initial diameter, 80% of single crystal hardness, 90-95% of ZnO density, the low resistivity of 0.025 W×cm, free from powder pressing, free from attachment effect and contamination. ZnO targets with resistivity of 2×10–3 W×cm, additionally doped by donor impurities, can be successfully sintered at low temperatures. ZnO thin films (~ 400 nm), obtained by DC magnetron sputtering, have the following parameters: the optical transparency is about 90% in the visible range, resistivity of 4×10-4 W×cm, free electron concentration of 3×1021 cm-3, and hall mobility of 6 cm2/Vs. The proposed technology simplifies and reduces the price of manufacturing uniformly doped ZnO ceramic targets, thin films and optoelectronic devices based on ZnO. |
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