The stationary and transient characteristics of photoconductivity in thermally deposited amorphous Ge_0.07As_0.07Se_0.86 thin films, with the theoretically calculated mean coordination number Z=2.21, are reported. Introduction of the metallic elements (Sn and Ge) in selenide and sulphide (As₂S₃, As₂Se₃, As-S-Se) glasses, lead to the appearance of the tetrahedral structural units in the base glasses, which change the mean coordination number Z. These changes lead to non-monotonous changes of the electrical, optical and photoelectrical characteristics, depending on the glass comp osition. It was found that the dependence of the photocurrent on light intensity has a power-law behavior I_ph~F^β (1.0≤β≤0.5), which is characteristic for the amorphous semiconductors with the exponential distribution of the localized states in the band gap E_g.