Effect of doping in Zn1-xAgxOy nanostructured films on hydrogen gas response
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2023-12-19 14:52
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POSTICA, Vasile, CREŢU, Vasilii, ABABII, Nicolai, VERJBITCHII, V., SHONTYA, Viktor, LUPAN, Oleg. Effect of doping in Zn1-xAgxOy nanostructured films on hydrogen gas response. In: Microelectronics and Computer Science: The 5th International Conference, Ed. 8, 22-25 octombrie 2014, Chisinau. Chișinău, Republica Moldova: Universitatea Tehnică a Moldovei, 2014, Ediția 8, pp. 112-116. ISBN 978-9975-45-329-5..
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Microelectronics and Computer Science
Ediția 8, 2014
Conferința "Microelectronics and Computer Science"
8, Chisinau, Moldova, 22-25 octombrie 2014

Effect of doping in Zn1-xAgxOy nanostructured films on hydrogen gas response


Pag. 112-116

Postica Vasile, Creţu Vasilii, Ababii Nicolai, Verjbitchii V., Shontya Viktor, Lupan Oleg
 
Technical University of Moldova
 
 
Disponibil în IBN: 11 aprilie 2019


Rezumat

Nanostructured Zn1-xAgxOy films have been deposited using a chemical solution synthesis method. The as-deposited nanostructured films were subjected to thermal annealing in furnace and rapid thermal annealing, for different temperatures and durations of treatment. The morphological, structural, vibrational and chemical proprieties were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), micro-Raman spectroscopy and energy dispersive X-ray spectroscopy (EDS) techniques. Effect of silver doping in Zn1-xAgxOy nanostructured films on gas response was investigated. The influence of the thermal annealing, duration and operation temperature on selectivity of sensors was studied and found that annealing at 500 °C for 60 s forms most sensitive nanostructured films.

Cuvinte-cheie
chemical synthesis, nanostructures, sensor, Zn1-xAgxOy