Interest in the SIS structures are of the ability to create on their basis efficient  solar energy  photoconvertor, by using low-cost methods of manufacturing such structures.  As a basic used component A² B⁶ compounds known for their high photosensitivity in the  visible region of the spectrum . It is proved that the introduction of the dielectric layer of the HJ between the components leads to a change  energy parameters of the HJ , in particular, increasing the energy barrier . Assuming that this layer tunnel- transparent, it does not reduce the current Isc, which is also  evidence to improve the separation of the carriers at the interface of the HJ .  Were fabricated and investigated CdS-CdTe heterojunction(HJ)  with intermediate dielectrics nano layers  such as CdO, Cd₂SnO₄, SiO_x.  In the manufacture of intermediate dielectric nanolayers uses two features : gettting own oxides on the surface of the base semiconductor, nanolayers  speacially deposited dielectric materials.   All dielectric layers were deposited by magnetron sputtering target of suitable materials.  Layer thickness was controlled by applying discharge current and the  time jf deposition. Thin layers of oxide semiconductors ITO  are used as frontal contact. It is known, that these layers have low resistance  up to 10^-4  Ωhm.cm , high transparency in the entire visible spectral range up to 86 % . ITO layers deposited on the cleaned glass plate sized 2x2 cm² , the thickness of the layer was 70-100 nm. Thus the prepared substrate was deposited CdS layer by CSS . The thickness of this layer was 0.15-0.20 μm. Magnetron sputter deposited on a substrate layer of one of these dielectrics  with thickness 2-30 nm ranged. After that, also by CSS method CdTe layer was deposited . CdTe layer thickness ranged 8-12 μm. The table shows the main energy parameters of manufactured solar cells with different  dielectric nanolayers. It should be noted that for solar cells with dielectric layer can observe   of sufficiently high energy parameters. The introduction of a thin dielectric layer is observed for all samples increase Ucd, Isc, and most importantly increase the fill factor (FF), indicating that improving the separation of carriers on the border of two semiconductors included in this heterojunction .