High-performance near-ultraviolet ZnSe-Based photodetectors with Cr/Au AND Ni/Au contacts
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KUPPERS, Franko, SIRKELI, Vadim, YILMAZOGLU, Oktay, HAJO, Ahid S., NEDEOGLO, Natalia, NEDEOGLO, Dumitru. High-performance near-ultraviolet ZnSe-Based photodetectors with Cr/Au AND Ni/Au contacts. In: Materials Science and Condensed Matter Physics, Ed. 9, 25-28 septembrie 2018, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2018, Ediția 9, p. 204.
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Materials Science and Condensed Matter Physics
Ediția 9, 2018
Conferința "International Conference on Materials Science and Condensed Matter Physics"
9, Chișinău, Moldova, 25-28 septembrie 2018

High-performance near-ultraviolet ZnSe-Based photodetectors with Cr/Au AND Ni/Au contacts

CZU: 535+538.9+539.1+621.38

Pag. 204-204

Kuppers Franko1, Sirkeli Vadim12, Yilmazoglu Oktay1, Hajo Ahid S.1, Nedeoglo Natalia2, Nedeoglo Dumitru2
 
1 Institute for Microwave Engineering and Photonics Darmstadt University of Technology Darmstadt,
2 Moldova State University
 
Proiecte:
 
Disponibil în IBN: 8 februarie 2019


Rezumat

Ultraviolet (UV) photodetectors have a wide range of applications in medicine, biology, space and telecommunication, including ozone layer monitoring, high temperature flame detection and personal UV exposure dosimetry [1]. Most commercial UV-photodetectors are based on Si or GaAs, which require a filter to eliminate visible and infrared light. Moreover, the intense UV radiation induces aging effects in Si-based photodetectors, which leads to their degradation. Wide-band gap semiconductors such as ZnSe are attractive materials due to their large bandgap energy (2.67 eV at 300 K), high electric field strength of breakdown (~ 1 MV/cm), and high resistance to intense UV and X-ray radiation [1]. Near-UV avalanche ZnSe-based photodetectors with Cr/Au and Ni/Au interdigital contacts have been fabricated and investigated. The Schottky contacts were fabricated by thermally evaporating 25 nm Cr or Ni followed by 140 nm Au, and performing standard photolithographic and lift-off processes. Low values of dark current of 1.6 nA and 0.8 nA at 15 V were achieved for UV photodetectors with Cr/Au and Ni/Au interdigital contacts, respectively, which indicates the high quality of Schottky contacts. As can be seen from Figs. 1(a)-1(b), a very high responsivity of 2.23 A/W and 5.40 A/W at bias voltage of 15 V for illumination under UV light with a wavelength of 325 nm was obtained for UV photodetectors with Cr/Au and Ni/Au interdigital contacts, respectively, which indicates high internal gain. The mechanism of internal gain is attributed to the avalanche effect in ZnSe under high internal electric field strength. The measured response times of UV photodetectors is in the microseconds range and is limited by the RC time of the measurement system.