we propose for the implementation a cost effective technological route in the obtaining process of ultrathin GaN membranes. Our technique is based on the modified version of previously described Surface Charge Lithography method. In achieving this goal, several steps were involved such as ion treatment of the surface in a controlled manner and photoelectrochemical etching process. As a result, choosing the right parameters of the Ar+ plasma treatment, mask design, and etching conditions it is possible to obtain ultrathin continuous GaN membranes with large surface area.