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 SM ISO690:2012DIKUSAR, Aleksandr , GLOBA, Pavel, REDCOZUBOVA, Olga, SIDEL’NIKOVA, Svetlana, SIRBU, Lilian, VIERU, Veaceslav, TIGINYANU, Ion. Kinetics of metal deposition in the process of electroless fabrication of porous InP-Cu nanocomposite. In: Electrochemical and Solid-State Letters, 2005, vol. 8, pp. 51-53. ISSN 1099-0062. DOI: https://doi.org/10.1149/1.1854772 |
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 Electrochemical and Solid-State Letters |
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| Volumul 8 / 2005 / ISSN 1099-0062 | ||||||
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| DOI:https://doi.org/10.1149/1.1854772 | ||||||
| Pag. 51-53 | ||||||
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We studied the kinetics of Cu deposition in the process of electroless coppering of porous layers of n-InP at temperatures from 3.5 to 25°C. The procedure of electroless coppering, including preliminary surface sensitization and activation in a supersonic field, is described. We show that the deposition in pores slows down and then ceases entirely with time due to the nonuniformity of the deposition rate of copper as a function of pore depth. Uniform Cu deposition was realized at 3.5°C. The obtained results pave the way to the development of technological conditions for uniform filling in pores in porous semiconductors with metals. |
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| Cuvinte-cheie copper, electrochemistry, Electrodes, energy dispersive spectroscopy, Indium alloys, Nanostructured materials, scanning electron microscopy, Semiconductor materials, Stoichiometry, Thermal effects, Electroless plating |
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