Recent development of the thin film solar cells, based on quaternary compounds, has been focused on the Ge contain compounds and their solid solutions. However, for effective utilization of Cu2ZnGeS4, deeper investigations of its transport properties are required. In the present work, the resistivity, ρ(T), magnetoresistance and Hall effect in p-type Cu2ZnGeS4 single crystals in pulsed magnetic fields up to 20 T are investigated. The dependence of ρ(T) in zero magnetic field is described by the Mott type of the variable-range hopping (VRH) charge transfer mechanism within a broad temperature interval of ~ 100 – 200 K. Magnetoresistance contains the positive and negative components, which are interpreted by the common reasons of doped semiconductors. On the other hand, a joint analysis of the resistivity and magnetoresistance data has yielded series of important electronic parameters like the VRH conduction interval (ΔTv), VRH characteristic temperature (T0), width of acceptor band (W), and MR coefficient (A04), the absolute (a) and relative (a/aB) values of the localization radius, the values of the density of the states (DOS) under different conditions [g(μ) and gav], the absolute (NA) and relative (NA/NC) values of the acceptor concentration. The Hall coefficient is negative, exhibiting an exponential dependence on temperature, which is quite close to that of ρ(T). This is typical of the Hall effect in the domain of the VRH charge transfer.