Excitonic spectra in HgGa2Se4 crystals
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SYRBU, Nicolae, ZALAMAI, Victor. Excitonic spectra in HgGa2Se4 crystals. In: Optical Materials, 2018, vol. 76, pp. 344-352. ISSN 0925-3467. DOI: https://doi.org/10.1016/j.optmat.2018.01.002
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Optical Materials
Volumul 76 / 2018 / ISSN 0925-3467

Excitonic spectra in HgGa2Se4 crystals

DOI: https://doi.org/10.1016/j.optmat.2018.01.002

Pag. 344-352

Syrbu Nicolae1, Zalamai Victor2
 
1 Technical University of Moldova,
2 Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 26 februarie 2018


Rezumat

Ground and excited states of four excitonic series (A, B, C and D) were discovered in HgGa2Se4 crystals at 10 K. Parameters of excitons and bands were determined. An effective mass of electrons mc is equal to 0.26m0 and masses of holes mv1, mv2 and mv3 are equal to 2.48m0, 2.68m0 and 1.6m0 respectively in Γ point of Brilloin zone. Valence bands splitting by crystal field (Δcf = 70 meV) and spin-orbital interaction (Δso = 250 meV) were estimated in Brillouin zone center. Optical functions (n, ε1 and ε2) for polarizations E⊥c and E||c in electron transitions region (2–6 eV) were calculated by Kramers-Kronig method. The discovered features were discussed on a base of the existing theoretical energetical band structure calculations and excitonic bands symmetries in k = 0 Brillouin zone for chalcopyrite crystals. The resonance Raman scattering was investigated.

Cuvinte-cheie
effective masses of electrons and holes, excitonic-polariton branches, HgGa2Se4 compound, Luminescence, Resonance Raman scattering