Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
741 6 |
Ultima descărcare din IBN: 2023-10-11 10:47 |
Căutarea după subiecte similare conform CZU |
621.9.048.4 (36) |
Working or machining with chip formation. Abrasive working. Hammers and presses (129) |
SM ISO690:2012 TOPALĂ, Pavel, MELNIC, Vasile, GUZGAN, Dorin. Micro-oxidation of silicon surfaces by means of electrical discharges in impulse. In: Fizică şi tehnică: procese, modele, experimente, 2013, nr. 2, pp. 32-36. ISSN 1857-0437. |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Fizică şi tehnică: procese, modele, experimente | ||||||
Numărul 2 / 2013 / ISSN 1857-0437 | ||||||
|
||||||
CZU: 621.9.048.4 | ||||||
Pag. 32-36 | ||||||
|
||||||
Descarcă PDF | ||||||
Rezumat | ||||||
The paper presents the results of the theoretical and experimental study of the formation of oxide films on silicon surfaces by means of rapid thermal oxidation in plasma caused by electrical discharges in impulse. The oxidation process has been carried out under normal atmospheric conditions. It has been shown that the properties of the oxide films depend on the processing power as well as the electrode base materials. |
||||||
Cuvinte-cheie discharge, oxidationof silicon surface, oxide films, descărcare, oxidarea suprafeţelor din siliciu, pelicule de oxizi |
||||||
|