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Electrical engineering (1153) |
SM ISO690:2012 PLEŞCO (JIN), Irina, GHIMPU, Lidia, CIOBANU, Vladimir, VOLODINA, Galina, TIGINYANU, Ion. Morphological and X-Ray diffraction analysis of CH3NH3PbI3 perovskite semiconductor. In: Fizică şi tehnică: procese, modele, experimente, 2014, nr. 1, pp. 38-43. ISSN 1857-0437. |
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Fizică şi tehnică: procese, modele, experimente | |
Numărul 1 / 2014 / ISSN 1857-0437 | |
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CZU: 621.315.592 | |
Pag. 38-43 | |
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CH3NH3PbI3 perovskite semiconductor is considered very promising for use in photovoltaics. Large family of perovskites includes insulating, antiferromagnetic, piezoelectric, thermoelectric, superconductive, conductive and semiconductive materials. Semiconductive perovskites used in photovoltaics have important advantages such as processability from solutions at room temperature, low price, and tunability of optical and electrical properties by chemical methods, including color tunability. Therefore, the initial study of this material was focused on Röntgen phase analysis. It was observed that at perovskite concentration of 40 % wt. with 1:1 rate of PbI2:CH3NH3I just a part of leadiodide has reacted and it wasn’t completely compensated. A comparison of the obtained results with literature data is presented. |
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Cuvinte-cheie perovskite, semiconductor, morphological analysis, diffraction analysis, photovoltaics, pervoskit, semiconductor, analiza morfologică, analiza difracţională, fotovoltaică |
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