Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity
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STAMOV, Ivan, TKACHENKO, D., STREL’CHUK, Yu.. Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity. In: IFMBE Proceedings: . 5th International Conference on Nanotechnologies and Biomedical Engineering, Ed. 5, 3-5 noiembrie 2021, Chişinău. Chişinău: Pontos, 2022, Ediția 5, Vol.87, pp. 92-99. ISSN 16800737. DOI: https://doi.org/10.1007/978-3-030-92328-0_13
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IFMBE Proceedings
Ediția 5, Vol.87, 2022
Conferința "Conference on Nanotechnologies and Biomedical Engineering"
5, Chişinău, Moldova, 3-5 noiembrie 2021

Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity

DOI:https://doi.org/10.1007/978-3-030-92328-0_13

Pag. 92-99

Stamov Ivan, Tkachenko D., Strel’chuk Yu.
 
T.G. Shevchenko State University of Pridnestrovie, Tiraspol
 
Proiecte:
 
Disponibil în IBN: 30 ianuarie 2022


Rezumat

The surface-barrier photosensitive structures based on zinc diarsenide crystals with metals have been produced. The electrical and photovoltaic properties of these structures were investigated. The photocurrent spectra and electrical characteristics are determined by the parameters of the semiconductor and the physicochemical properties of the contacting metals.

Cuvinte-cheie
Birefractive crystals, Electrical characteristics, Photovoltaic properties, Schottky barriers