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Ultima descărcare din IBN: 2023-12-21 15:58 |
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538.9+535+539.1 (1) |
Condensed matter physics. Solid state physics (349) |
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SM ISO690:2012 SUMAN, Victor, MORARI, Vadim, RUSU, Emil, GHIMPU, Lidia, URSACHI, Veaceslav. Electrophysical properties of ITO:Ga2O3 films grown by rf magnetron sputtering. In: Moldavian Journal of the Physical Sciences, 2021, nr. 2(20), pp. 145-150. ISSN 1810-648X. DOI: https://doi.org/10.53081/mjps.2021.20-2.05 |
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Moldavian Journal of the Physical Sciences | |||||||
Numărul 2(20) / 2021 / ISSN 1810-648X /ISSNe 2537-6365 | |||||||
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DOI:https://doi.org/10.53081/mjps.2021.20-2.05 | |||||||
CZU: 538.9+535+539.1 | |||||||
Pag. 145-150 | |||||||
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Rezumat | |||||||
In this paper, the electrophysical properties of ITO:Ga2O3 thin films grown by RF magnetron sputtering on glass and sapphire substrates are studied. Targets prepared by mechanical pressing of ITO and Ga2O3 powders are used as an evaporation source. The electrophysical characteristics as a function of optimumfilm growth parameters—the correlation between the argon and oxygen flows, the substrate temperature, and the discharge power of the magnetron—are studied |
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Cuvinte-cheie thin films, RF magnetron sputtering, current–voltage (I–V) characteristics, Filme subțiri, pulverizare magnetron RF, caracteristica voltamperică I-V |
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