Each new stage in development of lighting technology, from gas lamps to the incandescent lamps, from fluorescent lamps to semiconductors devices, has as the principal objectives quality improvement of human life and devices with low power consumption, low cost and “high quality”. Today, modern civilization could not exist without artificial lighting. Artificial lighting is so seamlessly integrated into our daily lives that we tend not to notice it until the lights go out, but classical light devices for general illuminate use an enormous amount of energy. We are now at the beginning of a new era, with the introduction of semiconductor white light devices. Since the development of InGaN-based light-emitting diodes (LEDs), semiconductor lighting has a rapid growing in illumination research. White light semiconductor devices have many promising properties, e.g., long life-times, low power consumptions, fast response times, applicability in final products in a wide range of sizes, and more. A white semiconductor light emitting device comprises: an excitation source (i.e.: blue LED chip) operable to generate excitation light of a first wavelength range and a phosphor (i.e.: YAG doped with rare earth cations) material configured to absorb at least a part of the excitation radiation and to emit light of a second wavelength range. Light emitted by the device comprises the combined light of the first and second wavelength ranges. In this paper we present the manufacturing steps of a semiconductor device with white light emission and the first and most controversial step in obtaining the white lighting semiconductor device with high performances is represented by the sintering of phosphorus. We have synthesized an optimal phosphor for 450 nm blue emitting light chip. Nanocrystalline ytrium aluminium garnet doped phosphor has been prepared by the calcinations (1000°C) of the precursor obtained by modified sol-gel technique. We deposited the nanostructured phosphor on blue chips in order to obtain an white light emitting device. The encapsulation techiques (i.e. using one type of material) facilitate the development of the device due to the enhancement of the emission parameter uniformity control. The crystal structures, crystallite size, lattice parameter and strain of the prepared sample were determined through X-ray diffraction measurement. SEM analysis was performed to study the morphology and microstructure of the crystalline phosphor. The bond configuration of nanostructured phosphor and white light emission was analysed by spectrometry.