Low-temperature sintering of highly conductive ZnO:Ga:Cl ceramics by means of chemical vapor transport
Close
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
388 0
SM ISO690:2012
KOLIBABA, Gleb, RUSNAC, Dumitru, FEDOROV, Vladimir, PETRENKO, Peter A., MONAICO, Eduard. Low-temperature sintering of highly conductive ZnO:Ga:Cl ceramics by means of chemical vapor transport. In: Journal of the European Ceramic Society, 2021, nr. 1(41), pp. 443-450. ISSN 0955-2219. DOI: https://doi.org/10.1016/j.jeurceramsoc.2020.08.002
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Journal of the European Ceramic Society
Numărul 1(41) / 2021 / ISSN 0955-2219 /ISSNe 1873-619X

Low-temperature sintering of highly conductive ZnO:Ga:Cl ceramics by means of chemical vapor transport

DOI: https://doi.org/10.1016/j.jeurceramsoc.2020.08.002

Pag. 443-450

Kolibaba Gleb1, Rusnac Dumitru1, Fedorov Vladimir2, Petrenko Peter A.3, Monaico Eduard4
 
1 Moldova State University,
2 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu",
3 Institute of Applied Physics,
4 Technical University of Moldova
 
Disponibil în IBN: 29 noiembrie 2020


Rezumat

A new technology for sintering a ZnO + Ga2O3 powder via chemical vapor transport based on HCl has been developed. The proposed sintering method has the following advantages: a low sintering temperature of 1000–1100 °C, there is no need to use of expensive dopant nanopowders, the possibility of multiple re-sintering, and the absence of changes in the diameter of the ceramics after sintering. A ZnO:Ga:Cl ceramics with a density of 5.31 g/cm3, a hardness of 2.0 GPa, and a resistivity of 1.46 × 10–3 Ω⋅cm has been synthesized. The solubility limit of the Ga2O3 dopant has been estimated at about 3 mol %. At a higher doping level, the content of the ZnGa2O4 spinel phase becomes significant. In addition, ZnO:Ga:Cl thin films with a resistivity of 2.77 × 10–4 Ω⋅cm can be grown by DC magnetron sputtering of the synthesized ceramics.

Cuvinte-cheie
Conductive ceramics, Doping by Ga, Halide vapor transport, Highly, thin films, zinc oxide, ZnO