GaN-Based 2D and 3D architectures for electronic applications
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2022-01-31 12:09
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CIOBANU, Vladimir. GaN-Based 2D and 3D architectures for electronic applications. In: IFMBE Proceedings: . 4th International Conference on Nanotechnologies and Biomedical Engineering, Ed. 4, 18-21 septembrie 2019, Chişinău. Switzerland: Springer Nature Switzerland AG, 2020, Ediția 4, Vol.77, pp. 203-206. ISBN 978-303031865-9. ISSN 16800737. DOI: https://doi.org/10.1007/978-3-030-31866-6_41
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IFMBE Proceedings
Ediția 4, Vol.77, 2020
Conferința "Conference on Nanotechnologies and Biomedical Engineering"
4, Chişinău, Moldova, 18-21 septembrie 2019

GaN-Based 2D and 3D architectures for electronic applications

DOI: https://doi.org/10.1007/978-3-030-31866-6_41

Pag. 203-206

Ciobanu Vladimir
 
Technical University of Moldova
 
Proiecte:
 
Disponibil în IBN: 30 octombrie 2020


Rezumat

In this paper we demonstrate the fabrication of electronic devices based on GaN nanostructures. For fabrication of 2D and 3D GaN nanostructures, Surface Charge Lithography (SCL) and Hydride Vapor Phase Epitaxy (HVPE) techniques were used. A memristor device based on GaN ultrathin membranes with the thickness of 15 nm obtained by SCL was elaborated. For GaN microtetrapods growth, the HVPE method was used, where ZnO microtetrapods were used as sacrificial template. Because of the high temperature in the reactor and presence of hydrogen gas, ZnO is decomposed, resulting in the formation of ultra-porous hollow GaN microtetrapods. A hydrostatic pressure sensor based on GaN hollow microtetrapods with the wall thickness of 80 nm covering the pressure interval up to 40 atm was fabricated and characterized.

Cuvinte-cheie
Artificial synapses, GaN microtetrapods, memristor, pressure sensor, Ultrathin membrane