Layered TlInS2 single crystals belong to a class of wide-band high-resistivity semiconductors and are prone to polytypism. In [1] the frequency dependence of dielectric properties and conductivity of single crystals TlInS2 before and after γ-irradiation were studied and the main parameters of the localized states were evaluated. This study presents the results of studying the frequency dependence of real (ε′) and imaginary (ε″) components of the complex dielectric permittivity and ac-conductivity of high-resistive TlInS2 single crystals at frequencies from 50 kHz up to 35 MHz and the effect on them electron-irradiation. Samples from TlInS2 were made in sandwich form with electrodes of silver paste. The thickness of the single-crystal samples of TlInS2 was ~200 microns. All measurements were performed at 300 K by the resonance method [2]. Electron-irradiation of the samples was carried out on the linear accelerator. The energy of electronirradiation was 4 MeV. Measurements of samples were carried out after each irradiation. The effect of electron-irradiation on the dielectric coefficients and ac-conductivity across the layers of TlInS2 single crystal in the frequency range 5 × 104 – 3.5 × 107 Hz was studied. It is shown that electron-irradiation of TlInS2 single crystal with doses of 2 × 1012 – 2.4 × 1013 e/cm2 resulted in a decrease in the real component (ε′) of the complex dielectric permittivity and tangible increase in its imaginary part (ε″), loss tangent (tan δ) and ac-conductivity (σac) across the layers at relatively low frequencies. At high frequencies, however, some noticeable changes of ε″, tan δ and σac due to electron-irradiation were not observed. The experimental frequency dependence of the dissipation factor tan δ for TlInS2 single crystal at f = 50 kHz – 35 MHz is characterized with a monotonic descending before and after electronirradiation. The hyperbolic decrease of tan δ with frequency is evidence of the fact, that conductivity loss becomes the main dielectric loss mechanism in the TlInS2 single crystal at studied frequency range. The investigation of the frequency dependences of ac-conductivity of the electron-irradiated TlInS2 single crystal made it possible to elucidate the hopping charge-transfer mechanism. We evaluated the density and energy spread of localized states near the Fermi level, the average hopping time and the average hopping length in TlInS2 single crystal at various doses of electron-irradiation. [1] S.N. Mustafaeva, M.M. Asadov, A.A. Ismailov Physics of the Solid State. V. 51. 2009. P. 2269-2273. [2] S.N. Mustafaeva Physics of the Solid State. V. 46. 2004.P. 1008-1010.