This paper describes the fabrication technique and operating characteristics of cleaved-coupled cavity (C3) tunable source with central emission wavelength 835 nm and 980 nm. The C3 concept is realized using gain-guided AlGaAs/GaAs single quantum well (SQW) and ridge-waveguide InGaAs/AlGaAs/GaAs multiquantum well (MQW) heterostructures. The tunable wavelength range for these devices was 10 nm and 16 nm respectively. The coupled cavity was formed by cleaving the laser diode (LD) chips in two parts. The cleaved sections held together by the contact metals, were then indium soldered p-side up to a copper heat sink for CW operation. The sections length of the 980 nm C3 laser was 320 μm and 440 μm and 240 μm, 260 μm for 835 nm device. The emission spectra of 835 nm and 980 nm C3 laser diodes are presented.