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 SM ISO690:2012SYRBU, Alexei, MEREUTZA, Alexandru, SURUCEANU, Grigore, YAKOVLEV, Vladimir, CATUGHIN, O., VIERU, Stanislav, POPESCU, Ion, ISPĂȘOIU, Radu, PREDESCU, M.. AlGaAs/InGaAs buried heterostructure laser diodes for pumping solid state lasers. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, 11-14 octombrie 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 453-456. DOI: https://doi.org/10.1109/SMICND.1995.495058 |
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| Proceedings of the International Semiconductor Conference 1995 | ||||||
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Conferința "International Semiconductor Conference" 18, Sinaia, Romania, 11-14 octombrie 1995 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1995.495058 | ||||||
| Pag. 453-456 | ||||||
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AlGaAs/InGaAs buried heterostructure laser diodes emitting at 960 nm for pumping solid state lasers have been fabricated and their optical and thermal characteristics have been studied. Cylindrical microlenses were used for obtaining equal divergence angles in both planes, perpendicular and parallel to the active layer plane at 1 W of CW operation optical power. The thermal resistance, active layer and mirror temperatures have been determined as well. |
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| Cuvinte-cheie Continuous wave lasers, Heterojunctions, optical properties, Optical pumping, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Semiconducting indium compounds, Solid state lasers, thermodynamic properties |
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