Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
192 0 |
Căutarea după subiecte similare conform CZU |
539.21 (53) |
Proprietăţile şi structura sistemelor moleculare (224) |
SM ISO690:2012 SERGEEV, Sergei, YOVU, M.. Relief crossed diffraction gratings formed by e-beam recording in As 2S3 films. In: Journal of Nanoelectronics and Optoelectronics, 2012, vol. 7, pp. 740-743. ISSN 1555-130X. DOI: https://doi.org/10.1166/jno.2012.1412 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Journal of Nanoelectronics and Optoelectronics | ||||||
Volumul 7 / 2012 / ISSN 1555-130X | ||||||
|
||||||
DOI:https://doi.org/10.1166/jno.2012.1412 | ||||||
CZU: 539.21 | ||||||
Pag. 740-743 | ||||||
|
||||||
Rezumat | ||||||
The relief structures of circular symmetry, composed of N superimposed crossed diffraction gratings, were formed in As2S3 thin films by e-beam writing and chemical etching. Number of crossed gratings of 2 μm period varied from 2 to 10. In the case of normal incident of the laser beam (λ = 0.633 μm) each formed relief structure generated a multi-beam light diffraction. Corresponding diffraction patterns were similar to the ones produced by 2D photonic quasicrystals. The first order diffraction efficiencies (DE) of superimposed diffraction gratings decreased with N. Decreasing of the dose of electron beam irradiation resulted in increasing of DE of N > 4 superimposed gratings. The corresponding efficiencies of N = 10 crossed gratings were about η = 1%. For N > 4 crossed gratings, formed at low dose of electron irradiation, the total diffraction efficiency was approximately equal to DE value of single grating (N = 1) and did not dependent on N. |
||||||
Cuvinte-cheie crossed gratings, diffraction efficiency, e-beam recording, Relief structures |
||||||
|