Specific heat of twisted bilayer graphene: Engineering phonons by atomic plane rotations
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NIKA, Denis, COCEMASOV, Alexandr, BALANDIN, Alexander A.. Specific heat of twisted bilayer graphene: Engineering phonons by atomic plane rotations. In: Applied Physics Letters, 2014, vol. 105, pp. 1-16. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.4890622
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Applied Physics Letters
Volumul 105 / 2014 / ISSN 0003-6951 /ISSNe 1077-3118

Specific heat of twisted bilayer graphene: Engineering phonons by atomic plane rotations

DOI:https://doi.org/10.1063/1.4890622

Pag. 1-16

Nika Denis12, Cocemasov Alexandr1, Balandin Alexander A.2
 
1 Moldova State University,
2 University of California, Riverside
 
 
Disponibil în IBN: 15 iunie 2023


Rezumat

We have studied the phonon specific heat in single-layer, bilayer, and twisted bilayer graphene. The calculations were performed using the Born-von Karman model of lattice dynamics for intralayer atomic interactions and spherically symmetric interatomic potential for interlayer interactions. We found that at temperature T < 15 K, specific heat varies with temperature as Tn, where n = 1 for graphene, n = 1.6 for bilayer graphene, and n = 1.3 for the twisted bilayer graphene. The phonon specific heat reveals an intriguing dependence on the twist angle in bilayer graphene, which is particularly pronounced at low temperature. The results suggest a possibility of phonon engineering of thermal properties of layered materials by twisting the atomic planes. 

Cuvinte-cheie
atoms, Crystal lattices, graphene, Materials properties, phonons, temperature